NDS331N Datasheet, PDF (3/3 Pages) Fairchild Semiconductor – N-Channel Logic Level Enhancement Mode Field Effect Transistor

SMD Type
Product specification
NDS331N
Electrical Characteristics (T_A = 25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I_S
Maximum Continuous Drain-Source Diode Forward Current
0.42
A
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
10
A
V_SD
Drain-Source Diode Forward Voltage
V_GS = 0 V, I_S = 0.42 A (Note 2)
0.8 1.2
V
Notes:
1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_θJC is guaranteed by
design while R_θCA is determined by the user's board design.
( ) = = = ( ) × P_D t
TJ− TA
RθJ A(t)
TJ−TA
Rθ_{J C}+Rθ_CA(t)
I
2
D
t
R_{DS(ON ) TJ}
Typical R_θJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 250^oC/W when mounted on a 0.02 in² pad of 2oz copper.
b. 270^oC/W when mounted on a 0.001 in² pad of 2oz copper.
1a
1b
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
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