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| ESDU5V0G3 Datasheet, PDF (3/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Uni-direction ESD Protection Diode | |||
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ELECTRICAL PARAMETER
Product specification
Symbol
VC
IPP
VBR
IT
IR
VRWM
VF
IF
Parameter
Clamping Voltage @ IPP
Peak Pulse Current
Breakdown Voltage @ IT
Test Current
Reverse Leakage Current @ VRWM
Reverse Standoff Voltage
Forward Voltage@ IF
Forward Current
V-I characteristics for a uni-directional TVS
ELECTRICAL CHARACTERISTICS(Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max
Per channel(I/O to GND unless otherwise specified)
Reverse stand off voltage
VRWMï¼1ï¼
5
Breakdown voltage
V(BR)
IT=1mA
6
Reverse leakage current
IR
VRWM=5V
1
Forward voltage
Clamping voltage
VF
VCï¼2ï¼
IF=10mA
IPP=1A
0.4
1.5
13
VR=0V,f=1MHz
0.8
Junction capacitance
CJ
VR=0V,f=1MHz, I/O to I/O
0.4
(1).Other voltages available upon request.
(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5
Unit
V
V
μA
V
V
pF
pF
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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