BFP420 Datasheet, PDF(3/3 Page) Siemens Semiconductor Group – NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)

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BFP420 Datasheet, PDF (3/3 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz)

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Product specification

BFP420

Electrical Characteristics at TA = 25Â°C, unless otherwise specified

Parameter

Symbol

Values

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 30 mA, VCE = 3 V, f = 2 GHz

18 25

Collector-base capacitance

VCB = 2 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb

- 0.15 0.3

Unit

GHz

Collector emitter capacitance

VCE = 2 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce

- 0.37 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb

- 0.55 -

Noise figure

IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt

Power gain, maximum stable1)

IC = 20 mA, VCE = 2 V, ZS = ZSopt,

ZL = ZLopt , f = 1.8 GHz

Insertion power gain

VCE = 2 V, IC = 20 mA, f = 1.8 GHz,

ZS = ZL = 50 â¦

Third order intercept point at output2)

VCE = 2 V, IC = 20 mA, f = 1.8 GHz,

ZS = ZL = 50 â¦

1dB Compression point at output

IC = 20 mA, VCE = 2 V, ZS = ZL = 50 â¦,

f = 1.8 GHz

Gms

|S21|2

IP3

P-1dB

1.1

- dB

14 17

- dBm

1Gms = |S21 / S12|

2IP3 value depends on termination of all intermodulation frequency components.

Termination used for this measurement is 50â¦ from 0.1 MHz to 6 GHz

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