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BB804 Datasheet, PDF (3/3 Pages) NXP Semiconductors – VHF variable capacitance double diode | |||
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Product specification
BB804
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per diode
IR
rs
Cd
CC-----dd----((--28--VV----))
reverse current
VR = 16 V; see Fig.3
â
â
VR = 16 V; Tj = 60 °C; see Fig.3
â
â
diode series resistance f = 100 MHz; note 1
â
0.2
diode capacitance
VR = 2 V; f = 1 MHz; see Figs 2 and 4
42 â
VR = 2 V; f = 1 MHz; white 2; see Figs 2 and 4 44
â
capacitance ratio
f = 1 MHz
1.65 â
20 nA
200 nA
â
â¦
46.5 pF
45.5 pF
1.75
Note
1. VR is the value at which Cd = 38 pF.
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