UMC5N Datasheet, PDF (2/2 Pages) Diodes Incorporated – DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS

Product specification
UMC5N
Electrical Characteristics, Pre-Biased NPN Transistor, Q₁ @T_A = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Input Resistance
Resistance Ratio
*Characteristics of Transistor – for reference only.
Symbol
V_I(off)
V_I(on)
V_O(on)
I_I
I_O(off)
G_I
f_T
R₁
R₂/R₁
Min
⎯
3
⎯
⎯
⎯
68
⎯
32.9
0.8
Typ Max
⎯
0.5
⎯
⎯
0.1
0.3
⎯
0.18
⎯
0.5
⎯
⎯
250
⎯
47
61.1
1
1.2
Unit
V
V
V
mA
μA
⎯
MHz
kΩ
⎯
Test Condition
V_CC = 5V, I_O = 100μA
V_O = 0.3V, I_O = 2mA
I_O/ I_I = 10mA/0.5 mA
V_I = 5V
V_CC = 50V, V_I = 0V
V_O = 5V, I_O = 5mA
V_CE = 10V, I_E = -5mA, f = 100MHz*
⎯
⎯
Electrical Characteristics, Pre-Biased PNP Transistor, Q₂ @T_A = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Input Resistance
Resistance Ratio
*Characteristics of Transistor – for reference only.
Symbol
V_I(off)
V_I(on)
V_O(on)
I_I
I_O(off)
G_I
f_T
R₁
R₂/R₁
Min
⎯
-2.5
⎯
⎯
⎯
30
⎯
3.29
1.7
Typ Max
⎯
-0.3
⎯
⎯
-0.1 -0.3
⎯
-1.8
⎯
-0.5
⎯
⎯
250
⎯
4.7 6.11
2.1
2.6
Unit
V
V
V
mA
μA
⎯
MHz
kΩ
⎯
Test Condition
V_CC = -5V, I_O = -100μA
V_O = -0.3V, I_O = -20mA
I_O/ I_I = -10mA/-0.5 mA
V_I = -5V
V_CC = -50V, V_I = 0V
V_O = -5V, I_O = -10mA
V_CE = -10V, I_E = 5mA, f = 100MHz*
⎯
⎯
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