UMA3N Datasheet, PDF (2/2 Pages) Rohm – Emitter common (dual digital transistors)

Product specification
EMA3 / UMA3N / FMA3A
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector power ^{EMA3, UMA3N}
PC
dissipation
FMA3A
Junction temperature
Tj
Storage temperature
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Tstg
Limits
−50
−50
−5
−100
150 (TOTAL)
300 (TOTAL)
150
−55 to +150
Unit
V
V
V
mA
mW ^∗1
∗²
˚C
˚C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO −50
−
−
V IC=−50µA
Collector-emitter breakdown voltage BVCEO −50
−
−
V IC=−1mA
Emitter-base breakdown voltage
BVEBO −5
−
−
V IE=−50µA
Collector cutoff current
ICBO
−
− −0.5 µA VCB=−50V
DC current transfer ratio
hFE 100 250 600
− VCE/IC=−5V/−1mA
Emitter cutoff current
IEBO
−
− −0.5 µA VEB=−4V
Collector-emitter saturation voltage VCE (sat) −
− −0.3 V IC/IB=−5mA/−0.25mA
Transition frequency
fT
−
250 −
MHz VCE=−10V, IE=5mA, f=100MHz
∗
Input resistance
R1 3.29 4.7 6.11 kΩ
−
∗ Transition frequency of the device
zPackaging specifications
Package
Code
T2R
Type
Basic ordering
unit (pieces)
8000
EMA3
UMA3N
FMA3A
Taping
TR
T148
3000
3000
http://www.twtysemi.com
[e-mail]
4008-318-123
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