UM5K1N Datasheet, PDF (2/2 Pages) Rohm – Small switching (30V, 0.1A)

!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous
Pulsed
ID
IDP^∗1
Reverse drain
current
Continuous
Pulsed
Total power dissipation (Tc=25˚C)
IDR
IDRP^∗1
PD^∗2
Channel temperature
Tch
Storage temperature
Tstg
∗1 Pw≤10µs, Duty cycle≤50%
∗2 With each pin mounted on the recommended lands.
Limits
Unit
30
V
±20
V
100
mA
200
mA
100
mA
200
mA
150
mW
150
˚C
−55∼+150
˚C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Gate-source leakage
IGSS
−
Drain-source breakdown voltage V(BR)DSS 30
Zero gate voltage drain current IDSS
−
Gate threshold voltage
VGS(th)
0.8
Static drain-source on-stage
resistance
RDS(on)
−
RDS(on)
−
Forward transfer admittance
Yfs
20
Input capacitance
Ciss
−
Output capacitance
Coss
−
Reverse transfer capacitance
Crss
−
Turn-on delay time
td(on)
−
Rise time
tr
−
Turn-off delay time
td(off)
−
Fall time
tr
−
Typ.
−
−
−
−
5
7
−
13
9
4
15
35
80
80
Max.
±1
−
1.0
1.5
8
13
−
−
−
−
−
−
−
−
Unit
Test Conditions
µA VGS=±20V, VDS=0V
V ID=10µA, VGS=0V
µA VDS=30V, VGS=0V
V VDS=3V, ID=100µA
Ω ID=10mA, VGS=4V
Ω ID=1mA, VGS=2.5V
mS ID=10mA, VDS=3V
pF VDS=5V
pF VGS=0V
pF f=1MHz
ns ID=10mA, VDD 5V
ns VGS=5V
ns RL=500Ω
ns RGS=10Ω
Product specification
UM5K1N
http://www.twtysemi.com
[e-mail]
4008-318-123
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