STS2620 Datasheet, PDF (2/4 Pages) SamHop Microelectronics Corp. – Dual E nhancement Mode Field E ffect Transistor (N and P Channel)

Product specification
S TS 2620
N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ ^C Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain C urrent
Gate-Body Leakage
ON CHARACTERISTICS ^b
BVDSS ^VGS =0V, ^ID =250uA
20
IDSS
VDS =16V, VGS =0V
IGSS
VGS ₌ 10V, VDS= 0V
V
1 uA
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA 0.5 0.8 1.5 V
Drain-S ource On-S tate R esistance R DS(ON)
On-S tate Drain Current
ID(ON)
Forward Transconductance
g_FS
DYNAMIC CHARACTERISTICS ^c
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS ^c
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
Total Gate C harge
Qg
Gate-S ource Charge
Qgs
Gate-Drain C harge
Qgd
VGS =4.5V, ID =2.5A
VGS = 2.5V, ID= 2A
VDS = 5V, VGS = 4.5V
VDS = 5V, ID=2.5A
VDS =10V, VGS = 0V
f =1.0MHZ
VDD = 10V,
ID = 1A,
VGS = 4.5V,
R GEN = 6 ohm
VDS =10V, ID = 2.5A,
VGS =4.5V
65 80 ^m-ohm
90 ^{110 m-ohm}
6
A
7
S
223
PF
68
PF
53
PF
10.5
ns
9.8
ns
15.2
ns
11.8
ns
3.9
nC
1.3
nC
0.8
nC
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