STC2201 Datasheet, PDF (2/3 Pages) SamHop Microelectronics Corp. – P-Channel E nhancement Mode Field Effect Transistor

Product specification
S TC2201
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ ^C Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
BVDSS
Zero Gate Voltage Drain C urrent
IDSS
Gate-Body Leakage
IGSS
ON CHARACTERISTICS ^b
Gate Threshold Voltage
V G S (th)
Drain-S ource On-S tate R esistance R DS(ON)
On-S tate Drain Current
ID(ON)
Forward Transconductance
g_FS
DYNAMIC CHARACTERISTICS ^c
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS ^c
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
Total Gate C harge
Qg
Gate-S ource Charge
Qgs
Gate-Drain C harge
Qgd
VGS _=0V, ID =-250uA
VDS =-16V, VGS= 0V
VGS ₌ 10V, VDS= 0V
VDS =VGS , ID =-250uA
VGS =-4.5V, ID = -2.0A
VGS = -2.5V, ID= -1.0A
VDS = -5V, VGS = -4.5V
VDS = -5V, ID= -2.0A
VDS = -20V, VGS = 0V
f =1.0MHZ
VDD = -10V,
ID = -1A,
VGS = -4.5V,
R GEN = 6 ohm
VDS = -10V, ID = -2A,
VGS = -4.5V
-20
V
1 ^uA
100 nA
-0.5 -0.8 -1.5 V
120 145 ^m-ohm
170 195 ^m-ohm
-5
A
6
S
216
PF
55
PF
28
PF
12.7
ns
15.4
ns
25.7
ns
20.4
ns
2.9
nC
0.5
nC
1.1
nC
http://www.twtysemi.com
[e-mail]
4008-318-123
2 of 3