SSM6N15FU Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Product specification
SSM6N15FU
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
I_GSS
V _{(BR) DSS}
I_DSS
V_th
ïY_fsï
R_{DS (ON)}
C_iss
C_rss
C_oss
t_on
t_off
V_GS = ±16 V, V_DS = 0
I_D = 0.1 mA, V_GS = 0
V_DS = 30 V, V_GS = 0
V_DS = 3 V, I_D = 0.1 mA
V_DS = 3 V, I_D = 10 mA
I_D = 10 mA, V_GS = 4 V
I_D = 10 mA, V_GS = 2.5 V
V_DS = 3 V, V_GS = 0, f = 1 MHz
V_DD = 5 V, I_D = 10 mA,
V_GS = 0~5 V
Switching Time Test Circuit
Min Typ. Max Unit
¾
¾
±1
mA
30
¾
¾
V
¾
¾
1
mA
0.8
¾
1.5
V
25
¾
¾
mS
¾
2.2
4.0
W
¾
4.0
7.0
¾
7.8
¾
pF
¾
3.6
¾
pF
¾
8.8
¾
pF
¾
50
¾
ns
¾
180
¾
(a) Test circuit
5V
IN
0
10 ms
V_DD = 5 V
Duty ^<= 1%
V_IN: t_r, t_f < 5 ns
(Z_out = 50 W)
Common Source
Ta = 25°C
OUT
V_DD
(b) V_IN
5V
0V
(c) V_OUT
V_DD
V_{DS (ON)}
10%
90%
10%
90%
t_r
t_f
t_on
t_off
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 mA for this
product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower
voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device. VGS recommended voltage of 2.5 V or higher to turn on
this product.
http://www.twtysemi.com
[e-mail]
4008-318-123
2 of 2