SSM3K04FU Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – High Speed Switch Applications

SMD Type
Electrical Characteristics (Ta = 25°C)
Product specification
SSM3K04FU
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Gate-source resistor
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = 10 V, V_DS = 0
⎯
⎯
15
μA
V _{(BR) DSS} I_D = 100 μA, V_GS = 0
20
⎯
⎯
V
I_DSS
V_DS = 20 V, V_GS = 0
⎯
⎯
1
μA
V_th
V_DS = 3 V, I_D = 0.1 mA
0.7
⎯
1.3
V
⎪Y_fs⎪
V_DS = 3 V, I_D = 10 mA
25
50
⎯
mS
R_{DS (ON)} I_D = 10 mA, V_GS = 2.5 V
⎯
4
12
Ω
C_iss
V_DS = 3 V, V_GS = 0, f = 1 MHz
⎯ 11.0 ⎯
pF
C_rss
V_DS = 3 V, V_GS = 0, f = 1 MHz
⎯
3.3
⎯
pF
C_oss
V_DS = 3 V, V_GS = 0, f = 1 MHz
⎯
9.3
⎯
pF
t_on
V_DD = 3 V, I_D = 10 mA, V_GS = 0~2.5 V
⎯
0.16
⎯
μs
t_off
V_DD = 3 V, I_D = 10 mA, V_GS = 0~2.5 V
⎯
0.19
⎯
R_GS
V_GS = 0~10 V
0.7 1.0 1.3 MΩ
Switching Time Test Circuit
(a) Test circuit
(b) V_IN
V_GS
(c) V_OUT
V_DS
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