SSM3J321T Datasheet, PDF (2/2 Pages) Toshiba Semiconductor – Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)

SMD Type
Product specification
Electrical Characteristics (Ta = 25°C)
SSM3J321T
Characteristic
Symbol
Test Conditions
Min Typ. Max Unit
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Turn-on time
Turn-off time
Drain-Source forward voltage
Note3: Pulse test
V _{(BR) DSS} I_D = -1 mA, V_GS = 0 V
V _{(BR) DSX} I_D = -1 mA, V_GS = +8 V
-20
⎯
⎯
V
-12
⎯
⎯
I_DSS
V_DS = -20 V, V_GS = 0 V
⎯
⎯
-10
μA
I_GSS
V_GS = ±8 V, V_DS = 0 V
⎯
⎯
±1
μA
V_th
V_DS = -3 V, I_D = -1 mA
-0.3
⎯
-1.0
V
⏐Y_fs⏐ V_DS = -3 V, I_D = -3.0 A
(Note 3) 6.1 12.2 ⎯
S
I_D = -3.0 A, V_GS = -4.5 V
(Note 3) ⎯
37
46
I_D = -2.0 A, V_GS = -2.5 V
(Note 3) ⎯
48
62
R_{DS (ON)}
mΩ
I_D = -1.0 A, V_GS = -1.8 V
(Note 3) ⎯
63
88
I_D = -0.3 A, V_GS = -1.5 V
(Note 3) ⎯
78 137
C_iss
⎯ 640 ⎯
C_oss
V_DS = -10 V, V_GS = 0 V, f = 1 MHz
⎯ 140 ⎯
pF
C_rss
⎯ 100 ⎯
Q_g
V_DS = −10 V, I_D = −4.6 A
Q_gs
V_GS = −4.5 V
Q_gd
⎯
8.1
⎯
⎯
6.4
⎯
nC
⎯
1.7
⎯
t_on
V_DD = -10 V, I_D = -2.0 A,
t_off
V_GS = 0 to -2.5 V, R_G = 4.7 Ω
⎯
32
⎯
ns
⎯ 102 ⎯
V_DSF
I_D = 5.2 A, V_GS = 0 V
(Note 3) ⎯ 0.86 1.2
V
Switching Time Test Circuit
(a) Test Circuit
0
IN
−2.5V
10 μs
V_DD = − 10 V
R_G = 4.7 Ω
D.U. ≤ 1%
V_IN: t_r, t_f < 5 ns
Common Source
Ta = 25°C
OUT
R_L
V_DD
(b) V_IN
0V
−2.5 V
V_{DS (ON)}
(c) V_OUT
V_DD
10%
90%
90%
10%
t_r
t_f
t_on
t_off
Notice on Usage
V_th can be expressed as the voltage between gate and source when the low operating current value is I_D = -1 mA for
this product. For normal switching operation, V_{GS (on)} requires a higher voltage than V_th and V_{GS (off)} requires a lower
voltage than V_th. (The relationship can be established as follows: V_{GS (off)} < V_th < V_{GS (on).})
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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