RTR020P02 Datasheet, PDF (2/2 Pages) Rohm – Switching (-20V, -2.0A)

Product specification
RTR020P02
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 µA VGS=±12V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −20 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
−
−1 µA VDS= −20V, VGS=0V
Gate threshold voltage
VGS (th) −0.7 − −2.0 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
−
RDS (on)^∗ −
−
100 135 mΩ ID= −2.0A, VGS= −4.5V
110 150 mΩ ID= −2.0A, VGS= −4.0V
180 250 mΩ ID= −1.0A, VGS= −2.5V
Forward transfer admittance
Yfs ^∗ 1.2
−
−
S VDS= −10V, ID= −1.0A
Input capacitance
Ciss
− 430 −
pF VDS= −10V
Output capacitance
Coss
−
80
−
pF VGS=0V
Reverse transfer capacitance Crss
− 55 − pF f=1MHz
Turn-on delay time
td (on) ^∗ _−
11
−
ns ID= −1.0A
Rise time
Turn-off delay time
Fall time
tr ^∗ _−
13
−
ns ^{VDD −15V}
td (off) ^∗ _−
38
−
VGS= −4.5V
ns _RL=15Ω
tf ^∗ _−
12
−
ns RGS=10Ω
Total gate charge
Qg
− 4.9 − nC VDD −15V
Gate-source charge
Qgs
− 1.2 − nC VGS= −4.5V
Gate-drain charge
Qgd
− 1.3 − nC ID= −2.0A
∗Pulsed
Body diode characteristics (source-drain characteristics)
Forward voltage
VSD
−
− −1.2 V IS= −0.8A, VGS=0V
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