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RB425D_1 Datasheet, PDF (2/2 Pages) Rohm – Shottky barrier diode
Product specification
RB425D
Forward Characteristics
100
10
1
0
100
200
300
400
500
600
FORWARD VOLTAGE VF (mV)
Capacitance Characteristics Per Diode
50
Ta=25℃
f=1MHz
40
30
20
10
0
0
5
10
15
20
REVERSE VOLTAGE VR (V)
1000
100
10
1
0.1
0.01
0
300
250
200
150
100
50
0
0
Reverse Characteristics
Ta=100 ℃
Ta=75 ℃
Ta=25 ℃
10
20
30
40
REVERSE VOLTAGE VR (V)
Power Derating Curve
25
50
75
100
125
JUNCTION TEMPERATURE TJ (℃)
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