PZT4403 Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP switching transistor

■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
Test conditons
V(BR)CBO IC = 100μA, IE = 0
V(BR)CEO IC = 1.0 mA, IB = 0
V(BR)EBO IE =100μA, IC = 0
ICBO VCB=-35 V, IE=0
IEBO VEB=-4V, IC=0
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Transition frequency
Delay time
Rise time
Storage time
Fall time
IC = -0.1 mA, VCE = -1.0 V
IC = -1.0 mA, VCE = -1.0 V
hFE IC = -10 mA, VCE = -1.0 V
IC = -150 mA, VCE = -2.0 V
IC = -500 mA, VCE = -2.0 V
IC = -150 mA, IB = -15 mA
VCE(sat)
IC = -500 mA, IB = -50 mA
IC = 150 mA, IB = 15 mA
VBE(sat)
IC = 500 mA, IB = 50 mA
fT IC = 20 mA, VCE = 10 V, f = 100 MHz
td
VCC = 30 V, VEB = 2.0 V,
tr
IC = 150 mA, IB1 = 15 mA
ts
VCC = 30 V, IC = 150 mA,
tf
IB1 = IB2 = 15 mA
* Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Product specification
PZT4403
Min Typ Max Unit
-40
V
-40
V
-5
V
-0.1 μA
-0.1 μA
30
60
100
100
300
20
-0.4
V
-0.75
-0.95
V
-1.3
200
MHz
15 ns
20 ns
225 ns
30 ns
■ Marking
Marking
4403
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