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| PXT2222A Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN switching transistor | |||
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Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
Collector capacitance
Emitter capacitance
Transition frequency
Noise figure
Turn-on time
Delay time
Rise time
Turn-off time
Storage time
Fall time
Product specification
PXT2222A
Symbol
Testconditons
ICBO
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tj = 125
IEBO IC = 0; VEB = 5 V
IC = 0.1 mA; VCE = 10V
IC = 1 mA; VCE = 10 V
IC = 10 mA; VCE = 10 V
hFE IC = 10 mA; VC = 10 V; Tj = -55
IC = 150 mA; VCE = 1 V
VCE = 10 V, IC = 150 mA
IC = 500 mA; VCE = 10 V
VCEsat
VBEsat
Cc
Ce
fT
F
ton
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IE = iE = 0; VCB = 10 V; f = 1 MHz
IC = iC = 0; VEB = 500 mV; f = 1 MHz
IC = 20 mA; VCE = 10 V; f = 100 MHz
IC = 200 ìA; VCE = 5 V; RS = 2 kÃ;
f = 1 kHz; B = 200 Hz
ICon = 150 mA; IBon = 15 mA;
IBoff = -15 mA
td
tr
toff
ts
tf
Min Typ Max Unit
10 nA
10 ìA
10 nA
35
50
75
35
50
100
300
40
300 mV
1
V
0.6
1.2 V
2
V
8
pF
25 pF
300
MHz
4
dB
35 ns
15 ns
20 ns
250 ns
200 ns
60 ns
Marking
Marking
1P
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