PMV37EN Datasheet, PDF (2/3 Pages) NXP Semiconductors – 30 V, 3.1 A N-channel Trench MOSFET

Product specification
PMV37EN
30 V, 3.1 A N-channel Trench MOSFET
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMV37EN
TO-236AB
4. Marking
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Table 4. Marking codes
Type number
PMV37EN
[1] % = placeholder for manufacturing site code
5. Limiting values
Marking code^[1]
KX%
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V_DS
V_GS
I_D
I_DM
P_tot
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
Conditions
T_j = 25 °C
V_GS = 10 V; T_amb = 25 °C
[1]
V_GS = 10 V; T_amb = 100 °C
[1]
T_amb = 25 °C; single pulse; t_p ≤ 10 µs
T_amb = 25 °C
[2]
[1]
T_sp = 25 °C
T_j
junction temperature
T_amb
ambient temperature
T_stg
storage temperature
Source-drain diode
I_S
source current
T_amb = 25 °C
[1]
Min Max Unit
-
30 V
-20 20 V
-
3.1 A
-
1.9 A
-
12.4 A
-
380 mW
-
520 mW
-
1800 mW
-55 150 °C
-55 150 °C
-65 150 °C
-
0.6 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
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