English
Language : 

PMN28UN Datasheet, PDF (2/2 Pages) NXP Semiconductors – TrenchMOS™ ultra low level FET
◁
SMD Type
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
25 °C ≤ Tj ≤ 150 °C
Tsp = 25 °C; VGS = 4.5 V
Tsp = 25 °C
VGS = 4.5 V; ID = 2 A; Tj = 25 °C
VGS = 2.5 V; ID = 2 A; Tj = 25 °C
VGS = 1.8 V; ID = 1.5 A; Tj = 25 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
drain-source voltage (DC)
25 °C ≤ Tj ≤ 150 °C
VGS
gate-source voltage (DC)
ID
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3
Tsp = 70 °C; VGS = 4.5 V; Figure 2
Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tsp = 25 °C; Figure 1
Tstg
storage temperature
Tj
junction temperature
Source-drain diode
IS
source (diode forward) current (DC) Tsp = 25 °C
Product specification
PMN28UN
Typ
Max Unit
-
12
V
-
5.7
A
-
1.75 W
-
150
°C
28
34
mΩ
32
40
mΩ
39
56
mΩ
Min
Max Unit
-
12
V
-
±8
V
-
5.7
A
-
4.5
A
-
22.9 A
-
1.75 W
−55
+150 °C
−55
+150 °C
-
1.45 A
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
2 of 2