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MMT05B350T3 Datasheet, PDF (2/2 Pages) ON Semiconductor – Thyristor Surge Protectors High Voltage Bidirectional TSPD
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Product specification
THERMAL CHARACTERISTICS
Characteristic
Operating Temperature Range Blocking or Conducting State
Overload Junction Temperature − Maximum Conducting State Only
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
TJ1
TJ2
TL
Max
−40 to + 125
+ 175
260
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics
Symbol
Min
Typ
Max
Breakover Voltage (Both polarities)
(dv/dt = 100 V/ms, ISC = 1.0 A, Vdc = 1000 V)
(+65°C)
V(BO)
−
−
400
−
−
412
Breakover Voltage (Both polarities)
(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms),
RI = 1.0 kW, t = 0.5 cycle) (Note 3)
(+65°C)
V(BO)
−
−
400
−
−
412
Breakover Voltage Temperature Coefficient
Breakdown Voltage (I(BR) = 1.0 mA) Both polarities
Off State Current (VD1 = 50 V) Both polarities
Off State Current (VD2 = VDM) Both polarities
On−State Voltage (IT = 1.0 A)
(PW ≤ 300 ms, Duty Cycle ≤ 2%) (Note 3)
dV(BO)/dTJ
V(BR)
ID1
ID2
VT
−
0.12
−
−
350
−
−
−
2.0
−
−
5.0
−
1.6
3.0
Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kW)
Both polarities
IBO
−
475
−
Holding Current (Both polarities)
VS = 500 V; IT (Initiating Current) = "1.0 A
Critical Rate of Rise of Off−State Voltage
(Linear waveform, VD = Rated VBR, TJ = 25°C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal)
3. Measured under pulse conditions to reduce heating.
(Note 3)
(+65°C)
IH
dv/dt
CO
150
270
−
130
−
−
2000
−
−
−
14
18
−
27
30
Unit
°C
°C
°C
Unit
V
V
V/°C
V
mA
V
mA
mA
V/ms
pF
Voltage Current Characteristic of TSPD
(Bidirectional Device)
Symbol
ID1, ID2
VD1, VD2
VBR
VBO
IBO
IH
VTM
Parameter
Off State Leakage Current
Off State Blocking Voltage
Breakdown Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
+ Current
VTM
V(BO)
IH
ID1
ID2
I(BO)
+ Voltage
VD1 VD2 V(BR)
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