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| MMDT2227 Datasheet, PDF (2/2 Pages) Transys Electronics – COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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Product specification
Switching characteristics
Parameter
Symbol
Test conditions
Min
Max
Unit
Delay time
td
10
nS
Rise time
Storage time
tr
VCC=30V, IC=150mA,
tS
VBE(off)=0.5V,IB1=15mA
25
nS
225
nS
Fall time
tf
60
nS
PNP 2907A
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-60
-5
-600
200
150
-55-150
Units
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Input Capacitance
Delay time
Rise time
Storage time
Fall time
*pulse test
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
hFE(1) *
hFE(2) *
hFE(3) *
hFE(4) *
hFE(5) *
VCE(sat)1 *
VCE(sat)2*
VBE(sat)1*
VBE(sat)2*
fT
Cob
Cib
td
tr
ts
tf
Test conditions
IC= -10μA, IE=0
IC= -10mA, IB=0
IE=-10μA, IC=0
VCB=-50V, IE=0
VCE=-30V,VEB(off)=-0.5V
VEB=-3V, IC=0
VCE=-10V, IC= -0.1mA
VCE=-10V, IC= -1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC= -150mA
VCE=-10V, IC=-500mA
IC=-150mA, IB=-15mA
IC=-500mA, IB=- 50mA
IC=-150mA, IB=-15mA
IC=-500mA, IB= -50mA
VCE=-20V, IC= -50mA,f=100MHz
VCB=-10V, IE= 0,f=1MHz
VEB=-2V, IC= 0,f=1MHz
VCC=-30V,IC=-150mA, IB1=-15mA
Min Max Unit
-60
V
-60
V
-5
V
-10
nA
-50
nA
-10
nA
75
100
100
100 300
50
-0.4
V
-1.6
V
-1.3
V
-2.6
V
200
MHz
8
pF
30
pF
10
nS
40
nS
225
nS
60
nS
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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