MMBTSC4226 Datasheet, PDF (2/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

Characteristics at T_amb=25 ^OC
Symbol
Min.
DC Current Gain
at V_CE=3V, I_C=7mA
Current Gain Group ^Q
h_FE
50
R
h_FE
80
S
h_FE
125
Collector Cutoff Current
at V_CB=10V
Emitter Cutoff Current
I_CBO
-
at V_EB=1V
Gain Bandwidth Product
I_EBO
-
at V_CE=3V, I_C=7mA
Feed back Capacitance ¹⁾
f_T
3.0
at V_CE=3V, f=1MHz
Insertion Power Gain
at V_CE=3V, I_C=7mA, f=1GHz
Noise Figure
C_re
-
S_21e ²
7
at V_CE=3V, I_C=7mA, f=1GHz
NF
-
1) _{Measured with 3 terminal bridge, Emitter and case should be grounded.}
Classification of h_FE
RANK
Q
MARKING
R23
h_FE
50 ~100
R
R24
80 ~160
S
R25
125 ~250
Typ.
-
-
-
-
-
4.5
0.7
9
1.2
Product specification
MMBTSC4226
Max.
Unit
100
-
160
-
250
-
1.0
µA
1.0
µA
-
GHz
1.5
pF
-
dB
2.5
dB
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