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MMBTSA812 Datasheet, PDF (2/2 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistors
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Characteristics at Tamb=25 OC
DC Current Gain
at -VCE=6V, -IC=1mA
Current Gain Group O
Y
G
L
Collector Cutoff Current
at -VCB=60V
Emitter Cutoff Current
at -VEB=5V
Collector Saturation Voltage
at -IC=100mA, -IB=10mA
Base Emitter Voltage
at -VCE=6V, -IC=1mA
Gain Bandwidth Product
at -VCE=6V, -IC=10mA
Output Capacitance
at -VCB=10V, f=1MHz
Symbol
hFE
hFE
hFE
hFE
-ICBO
-IEBO
-VCE(sat)
-VBE
fT
COB
Min.
90
135
200
300
-
-
-
0.58
-
-
Product specification
MMBTSA812
Typ.
Max.
Unit
-
180
-
-
270
-
-
400
-
-
600
-
-
0.1
µA
-
0.1
µA
-
0.3
V
-
0.68
V
180
-
MHz
4.5
-
pF
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