MMBF170 Datasheet, PDF (2/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SMD Type
Product specification
MMBF170
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
Turn-Off Time
Symbol Min Typ Max Unit
Test Condition
BV_DSS 60
IDSS
¾
I_GSS
¾
70
¾
V VGS = 0V, ID = 100mA
¾
1.0
µA VDS = 60V, VGS = 0V
¾
±10
nA VGS = ±15V, VDS = 0V
V_GS(th)
0.8
2.1
3.0
V VDS = VGS, ID = 250mA
RDS (ON)
¾
¾
¾
¾
5.0
5.3
W
V_GS = 10V, I_D = 200mA
V_GS = 4.5V, I_D = 50mA
g_FS
80
¾
¾
mS VDS =10V, ID = 0.2A
Ciss
¾
22
40
pF
Coss
¾
11
30
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
C_rss
¾
2.0 5.0
pF
ton
¾
¾
10
ns V_DD = 25V, I_D = 0.5A,
t_off
¾
¾
10
ns ^{VGS = 10V, RGEN = 50W}
Notes: 3. Short duration test pulse used to minimize self-heating effect.
Ordering Information ^{(Note 4)}
Device
MMBF170-7-F
Packaging
SOT-23
Shipping
3000/Tape & Reel
Marking Information
K6Z
K6Z = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
March
3
2001
M
Apr
4
2002
N
May
5
2003
P
Jun
6
2004
R
Jul
7
2005
S
Aug
8
2006
T
Sep
9
2007
U
Oct
O
2008
V
Nov
N
2009
W
Dec
D
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