KUK7606-75B Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – TrenchMOSTM standard level FET

SMD Type
TransistIoCrs
Product specification
KUK7606-75B
Electrical Characteristics Ta = 25
Parameter
drain-source breakdown voltage
gate-source threshold voltage
Zero gate voltage drain current
gate-source leakage current
drain-source on-state resistance
total gate charge
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain (diode forward) voltage
reverse recovery time
recovered charge
Symbol
Testconditons
Min Typ Max Unit
ID = 0.25 mA; VGS = 0 V;Tj = 25
75
V
V(BR)DSS
ID = 0.25 mA; VGS = 0 V;Tj = -55
70
V
ID = 1 mA; VDS = VGS;Tj = 25
2
3
4
V
VGS(th) _{ID = 1 mA; VDS = VGS;Tj = 175}
1
V
ID = 1 mA; VDS = VGS;Tj = -55
4.4 V
IDSS
VDS = 30 V; VGS = 0 V;Tj = 25
VDS = 30 V; VGS = 0 V;Tj = 175
0.02 1 ìA
500 ìA
IGSS VGS = 20 V; VDS = 0 V
2 100 nA
RDSon
VGS = 10 V; ID = 25 A;Tj = 25
VGS = 10 V; ID = 25 A;Tj = 175
4.8 5.6 mÙ
11.8 mÙ
Qg(tot)
91
nC
Qgs VGS = 10 V; VDD = 60 V;ID = 25 A
19
nC
Qgd
28
nC
Ciss
5585 7446 pF
Coss VGS = 0 V; VDS = 25 V;f = 1 MHz
845 1014 pF
Crss
263 360 pF
td(on)
36
ns
tr
56
ns
VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG = 10Ù
td(off)
128
ns
tf
48
ns
from drain lead 6 mm from package to centre
Ld
of die
4.5
nH
2.5
nH
Ls from source lead to source bond pad
7.5
nH
VSD Is = 40A; VGS = 0 V
0.85 1.2 V
trr
IS = 20 A; -dIF/dt = -100 A/ìs;
86
ns
Qr VGS = -10 V; VDS = 30 V
253
nC
http://www.twtysemi.com
[e-mail]
4008-318-123
2of 2