KUK7107-55AIE Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – TrenchPLUS standard level FET

SMD Type
TransistIoCrs
Product specification
KUK7107-55AIE
Electrical Characteristics Ta = 25
Parameter
drain-source breakdown voltage
gate-source threshold voltage
Zero gate voltage drain current
gate-source breakdown voltage
gate-source leakage current
drain-source on-state resistance
ratio of drain current to sense current
total gate charge
gate-to-source charge
gate-to-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
internal source inductance
source-drain (diode forward) voltage
reverse recovery time
recovered charge
Symbol
Testconditons
ID = 0.25 mA; VGS = 0 V;Tj = 25
V(BR)DSS
ID = 0.25 mA; VGS = 0 V;Tj = -55
ID = 1 mA; VDS = VGS;Tj = 25
VGS(th) _{ID = 1 mA; VDS = VGS;Tj = 175}
ID = 1 mA; VDS = VGS;Tj = -55
VDS = 55 V; VGS = 0 V;Tj = 25
IDSS
VDS = 55 V; VGS = 0 V;Tj = 175
V(BR)GSS IG = 1 mA;-55
Tj 175
IGSS
VGS = 10 V; VDS = 0 V;Tj = 25
VGS = 10 V; VDS = 0 V;Tj = 175
RDSon
VGS = 10 V; ID = 50 A;Tj = 25
VGS = 10 V; ID = 50 A;Tj = 175
ID/Isense VGS > 10 V;-55
Tj 175
Qg(tot)
Qgs VGS = 10 V; VDD = 44 V;ID = 25 A
Qgd
Ciss
Coss VGS = 0 V; VDS = 25 V;f = 1 MHz
Crss
td(on)
tr
td(off)
VDD = 30 V; RL = 1.2 ;VGS = 10 V; RG =
10
tf
Ld
measured from upper edge of drain
mounting base to center of die
Ls
measured from source lead to source
bond pad
VSD Is = 25A; VGS = 0 V
trr
IS = 20 A; dIF/dt = -100 A/ìs;
Qr
VGS = -10 V; VDS = 30 V
Min Typ Max Unit
55
V
50
V
2
3
4
V
1
V
4.4 V
0.1 10
A
250
A
20 22
V
22 1000 nA
10
A
. 5.8 7 m
14 m
450 500 550
116
nC
19
nC
50
nC
4500
pF
960
pF
510
pF
36
ns
115
ns
159
ns
111
ns
2.5
nH
7.5
nH
0.85 1.2 V
80
ns
200
nC
http://www.twtysemi.com
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4008-318-123
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