KTS3C3F30L Datasheet, PDF (2/3 Pages) Guangdong Kexin Industrial Co.,Ltd – STripFET TM Power MOSFET

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Electrical Characteristics Ta = 25
Parameter
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current (VGS = 0)
Gate-body Leakage Current (VDS = 0)
Gate Threshold Voltage
Static Drain-source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-off Delay Time
Fall Time
Source-drain Current
Source-drain Current (pulsed) *1
Product specification
KTS3C3F30L
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
Qg
Qgs
Qgd
td(off)
tf
ISD
ISDM
ID = 250
ID = 250
Testconditons
A, VGS = 0
A, VGS = 0
VDS = Max Rating
VDS = Max Rating, TC = 125
VGS = 16V
VDS = VGS, ID = 250 A
VDS = VGS, ID = 250 A
VGS = 10V, ID = 1.75A
VGS = 10V, ID = 1.5A
VGS = 4.5V, ID = 1.75A
VGS = 4.5V, ID = 1.5A
VDS = 15 V ID= 1.75 A
VDS = 15 V ID= 1.5 A
N-Channel
VDS = 25V, f = 1 MHz, VGS = 0
P-Channel
VDS = 25V, f = 1 MHz, VGS = 0
N-Channel
VDD=15V,ID=1.75A,RG=4.7 , VGS =
4.5V
P-Channel
VDD=15V,ID=1.5A,RG=4.7 ,
VGS=4.5V
N-Channel
VDD =24V, ID=3.5A,VGS = 4.5V
P-Channel
VDD = 24V, ID= 3A,VGS = 4.5V
N-Channel
VDD = 15V, ID = 1.75A,RG = 4.7 ,
VGS = 4.5V
P-Channel
VDD = 15V, ID = 1.5A,RG = 4.7 ,
VGS = 4.5V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
30
V
30
V
1
A
1
A
10
A
10
A
10 A
10 A
1
V
1
V
50 65 m
140 165 m
60 90 m
160 200 m
5.5
S
4
S
320
pF
420
pF
90
pF
95
pF
40
pF
30
pF
27
ns
14.5
ns
40
ns
37
ns
8.5 12 nC
4.8 7 nC
2
nC
1.7
nC
4
nC
2
nC
30
ns
90
ns
20
ns
23
ns
3.5 A
3A
14 A
12 A
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