KRF7555 Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

SMD Type
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current Body Diode)
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID = -250 A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
RDS(on)
VGS = -4.5V, ID = -4.3A*1
VGS = -2.5V, ID = -3.4A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs
VDS = -10V, ID = -0.8A*1
VDS = -16V, VGS = 0V
IDSS
VDS = -16V, VGS = 0V, TJ = 125
IGSS
VGS = -12V
VGS = 12V
Qg
ID = -3.0A
Qgs
VDS = -10V
Qgd
VGS = -5.0V
td(on)
VDD = -10V
tr
ID = -2.0A
td(off)
RD = 5.0
tf
Rg = 6.0
Ciss
VGS = 0V
Coss
VDS = -10V
Crss
f = 1.0MHz
IS
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
VSD
TJ = 25 , IS = -1.6A, VGS = 0V*1
trr
TJ = 25 , IF =-2.5A
Qrr
di/dt = -100A/ s*1
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
ICIC
Product specification
KRF7555
Min Typ Max Unit
-20
V
-0.005
V/
0.055
0.105
-0.6
-1.2 V
2.5
S
-1.0
A
-25
-100
nA
100
10 15
2.1 3.1 nC
2.5 3.7
10
46
ns
60
64
1066
402
pF
126
-1.3
A
-34
-1.2 V
54 82 ns
41 61 nC
http://www.twtysemi.com
[e-mail]
4008-318-123
2 of 2