KRF7506 Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – HEXFET Power MOSFET

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Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current Body Diode)
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID = -250 A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
RDS(on)
VGS = -10V, ID = -1.2A*1
VGS = -4.5V, ID = -0.60A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs
VDS = -10V, ID = -0.60A*1
VDS = -24V, VGS = 0V
IDSS
VDS = -24V, VGS = 0V, TJ = 125
IGSS
VGS = -20V
VGS = 20V
Qg
ID = -1.2A
Qgs
VDS = -24V
Qgd
VGS = -10V
td(on)
VDD = -15V
tr
ID = -1.2A
td(off)
RD = 6.2
tf
Rg = 12
Ciss
VGS = 0V
Coss
VDS = -25V
Crss
f = 1.0MHz
IS
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
VSD
TJ = 25 , IS = -1.2A, VGS = 0V*1
trr
TJ = 25 , IF =-1.2A
Qrr
di/dt = -100A/ s*1
*1 Pulse width 300 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
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Product specification
KRF7506
Min Typ Max Unit
-30
V
-0.039
V/
0.27
0.45
-1.0
V
0.92
S
-1.0
A
-25
-100
nA
100
7.5 11
1.3 1.9 nC
2.5 3.7
9.7
12
ns
19
9.3
180
87
pF
42
-1.25
A
-9.6
-1.2 V
30 45 ns
37 55 nC
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