KPA1873 Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – MOS Field Effect Transistor

SMD Type
ICIC
Product specification
KPA1873
Electrical Characteristics Ta = 25
Parameter
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
Testconditons
Min Typ Max Unit
IDSS VDS = 20 V, VGS = 0
10
A
IGSS VGS = 12V, VDS = 0
10 A
VGS(off) VDS = 10 V, ID = 1 mA
0.5 1.0 1.5 V
| yfs | VDS = 10 V, ID = 3.0A
5
S
RDS(on)1 VDS = 4.5V, ID = 3.0 A
13 18 23 m
RDS(on)2 VGS = 4.0V, ID = 3.0 A
14 19 24 m
RDS(on)3 VGS = 3.1V, ID = 3.0 A
14.5 21.5 28 m
RDS(on)4 VGS = 2.5 V, ID = 3.0 A
15 24.5 29 m
Ciss
705
pF
Coss VDS = 10 V, VGS = 0, f = 1 MHz
205
pF
Crss
145
pF
td(on)
60
ns
tr
ID = 3.0 A, VGS(on) = 4.0 V, VDD =10 V,RG
310
ns
td(off) ^{= 10}
380
ns
tf
420
ns
QG
9.0
nC
QGS ID = 6.0A, VDD = 16V, VGS = 4.0 V
2.0
nC
QGD
4.0
nC
VF(S-D) IF = 6.0 A, VGS = 0
0.84
V
trr IF = 6.0 A, VGS = 0 V
480
ns
Qrr di/dt = 50 A/ s
1200
nC
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