KMBT2222A Datasheet, PDF (2/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Switching Transistor

SMD Type
Transistors
Product specification
KMBT2222A
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO IC = 10 A, IE = 0
75
V
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA, IB = 0
40
V
Emitter-Base Breakdown Voltage V(BR)EBO IC = 10 A, IC = 0
6
V
Collector cutoff current
ICBO
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tj = 125
10 nA
10
A
Emitter cutoff current
IEBO IC = 0; VEB = 3 V
10 nA
IC = 0.1 mA; VCE = 10 V
35
IC = 1 mA; VCE = 10 V
50
IC = 10 mA; VCE = 10 V
75
DC current gain
hFE IC = 10 mA; VCE = 10 V; Ta = -55
35
IC= 150 mA; VCE = 10 V
100
300
IC = 150 mA; VCE = 1 V
50
IC = 500 mA; VCE = 10 V
40
collector-emitter saturation voltage
base-emitter saturation voltage
Delay time
Rise time
Storage time
Fall time
Output Capacitance
Input Capacitance
Noise Figure
Transition frequency
VCEsat
VBEsat
td
tr
ts
tf
Cobo
Cibo
NF
fT
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 150 mA; IB = 15 mA
0.6
IC = 500 mA; IB = 50 mA
IB1 = 15 mA, IC = 150 mA,
VCC = 30V, VBE = -0.5 V
IB1 = IB2 = 15 mA,
IC = 150 mA, VCC = 30V
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 10 V, IC = 100 A,RS = 1 k , f = 1 kHz
IC = 20 mA; VCE = 20 V; f = 100 MHz
300
300 mV
1
V
1.2 V
2
V
15 ns
25 ns
200 ns
60 ns
8
pF
25 pF
4
dB
MHz
Marking
Marking
1P
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