IRLML0040TRPBF Datasheet, PDF (2/2 Pages) International Rectifier – HEXFET Power MOSFET

Product specification
IRLML0040TRPbF
Electric Characteristics @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
40 ––– ––– V V_GS = 0V, I_D = 250μA
ΔV_(BR)DSS/ΔT_{J Breakdown Voltage Temp. Coefficient –––}
R_DS(on)
–––
Static Drain-to-Source On-Resistance
–––
0.04
44
62
–––
56
78
V/°C
mΩ
Reference to 25°C, I_D = 1mA
d V_GS = 10V, I_D = 3.6A
d V_GS = 4.5V, I_D = 2.9A
V_GS(th)
Gate Threshold Voltage
1.0 1.8 2.5
V V_DS = V_GS, I_D = 25μA
I_DSS
Drain-to-Source Leakage Current
––– ––– 20
μA ^{VDS = 40V, VGS = 0V}
––– ––– 250
V_DS = 40V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
––– ––– 100 _nA V_GS = 16V
Gate-to-Source Reverse Leakage
––– ––– -100
V_GS = -16V
R_G
Internal Gate Resistance
––– 1.1 ––– Ω
gfs
Forward Transconductance
6.2 ––– ––– S V_DS = 10V, I_D = 3.6A
Q_g
Total Gate Charge
––– 2.6 3.9
I_D = 3.6A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
0.7
1.4
–––
–––
d nC VDS = 20V
V_GS = 4.5V
t_d(on)
Turn-On Delay Time
––– 5.1 –––
V_DD = 20V
t_r
t_d(off)
Rise Time
Turn-Off Delay Time
––– 5.4
–––
ns ^{ID = 1.0A}
––– 6.4 –––
R_G = 6.8 Ω
t_f
Fall Time
––– 4.3 –––
V_GS = 4.5V
C_iss
Input Capacitance
––– 266 –––
V_GS = 0V
C_oss
Output Capacitance
––– 49 ––– pF V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 29 –––
ƒ = 1.0MHz
Source - Drain Ratings and Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
––– ––– 1.3
––– ––– 15
––– ––– 1.2
MOSFET symbol
D
A ^{showing the}
G
integral reverse
S
d ^{p-n junction diode.}
V T_J = 25°C, I_S = 1.3A, V_GS = 0V
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
–––
–––
10
9.3
–––
–––
d ^{ns TJ = 25°C, VR = 32V, IF = 1.3 A}
nC di/dt = 100A/μs
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