HAT1044M Datasheet, PDF (2/3 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET Power Switching

Product specification
Absolute Maximum Ratings
HAT1044M
(Ta = 25°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID ^{Note 2}
–4.5
A
Drain peak current
ID (pulse) ^{Note 1}
–18
A
Body-drain diode reverse drain current
IDR ^{Note 2}
–4.5
A
Channel dissipation
Pch (pulse) ^{Note 2}
2.0
W
Channel dissipation
Pch (continuous) ^{Note 3}
1.05
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the alumina ceramic board (50 × 50 × 0.7 mm), PW ≤ 5 s, Ta = 25°C
3. When using the alumina ceramic board (50 × 50 × 0.7 mm), Ta = 25°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 4. Pulse test
Symbol
V (BR) DSS
IGSS
IDSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
VDF
trr
Min Typ Max
–30 —
—
—
— ±0.1
—
—
–1
–1.0 — –2.5
—
50
60
—
80 105
3
5.5 —
— 600 —
— 220 —
— 150 —
—
13
—
—
2
—
—
3
—
—
12
—
—
85
—
—
55
—
—
55
—
— –0.95 —
—
50
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = –10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = –30 V, VGS = 0
VDS = –10 V, ID = –1 mA
ID = –3 A, VGS = –10 V ^{Note 4}
ID = –3 A, VGS = –4.5 V ^{Note 4}
ID = –3 A, VDS = –10 V ^{Note 4}
VDS = –10 V
VGS = 0
f = 1 MHz
VDS = 10 V
VGS = 0
f = 1 MHz
VGS = –10 V, ID = –3 A,
RL = 3.3 Ω
IF = –4.5 A, VGS = 0 ^{Note 4}
IF = –4.5 A, VGS = 0
diF/dt = –20 A/µs
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