HAT1043M Datasheet, PDF (2/2 Pages) Hitachi Semiconductor – Silicon P Channel Power MOS FET Power Switching

Absolute Maximum Ratings
Product specification
HAT1043M
Item
Symbol
Value
Drain to source voltage
VDSS
–20
Gate to source voltage
VGSS
±12
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel dissipation
ID
ID (pulse) ^{Note 1}
IDR ^{Note 2}
Pch (pulse) ^{Note 2}
Pch (continuous) ^{Note 3}
–4.4
–17.6
–4.4
2.0
1.05
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the alumina ceramic board (50 × 50 × 0.7 mm), PW ≤ 5 s, Ta = 25°C
3. When using the alumina ceramic board (50 × 50 × 0.7 mm), Ta = 25°C
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 4. Pulse test
Symbol
V (BR) DSS
IGSS
IDSS
VGS (off)
RDS (on)
RDS (on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
VDF
trr
Min
–20
—
—
–0.4
—
—
4
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
55
85
7
750
310
220
11
2
3.5
15
100
85
100
–0.95
50
Max
—
±0.1
–1
–1.4
65
110
—
—
—
—
—
—
—
—
—
—
—
–1.23
—
Unit
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = –10 mA, VGS = 0
VGS = ±12 V, VDS = 0
VDS = –20 V, VGS = 0
ID = –1 mA, VDS = –10 V
ID = –3 A, VGS = –4.5 V ^{Note 4}
ID = –3 A, VGS = –2.5 V ^{Note 4}
ID = –3 A, VDS = –10 V ^{Note 4}
VDS = –10 V
VGS = 0
f = 1 MHz
VDD = –10 V
VGS = –4.5 V
ID = –4.4 A
VGS = –4.5 V, ID = –3 A,
RL = 3.3 Ω
IF = –4.4 A, VGS = 0
IF = –4.4 A, VGS = 0
diF/dt = –20 A/µs
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