FZT857 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR

SMD Type
Electrical Characteristics Ta = 25 unless otherwise stated
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current R 1KÙ
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer Ratio
Transition Frequency
Output Capacitance
Switching Times
Symbol
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
ICBO
ICER
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hFE
fT
Cobo
ton
toff
Testconditons
IC=100ìA
IC=1ìA, RB 1KÙ
IC=10mA*
IE=100ìA
VCB=300V
VCB=300V,Tamb=100
VCB=300V
VCB=300V,Tamb=100
VEB=6V
IC=500mA, IB=50mA*
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=3.5A, IB=600mA*
IC=3.5A, IB=600mA*
IC=3.5A, VCE=10V*
IC=10mA, VCE=5V
IC=500mA, VCE=10V*
IC=2A, VCE=10V*
IC=3A, VCE=10V*
IC=100mA, VCE=10V,f=50MHz
VCB=20V, f=1MHz
IC=250mA, IB1=25mA
IB2=25mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2%
Marking
Marking
FZT857
Transistors
Product specification
FZT857
Min Typ Max Unit
350 475
V
350 475
V
300 350
V
6
8
V
50 nA
1 ìA
50 nA
1 ìA
10 nA
100 mV
155 mV
230 mV
345 mV
1250 mV
1.12 V
100 200
100 200 300
15 25
15
80
MHz
11
pF
100
ns
5300
ns
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