FZT690B Datasheet, PDF (2/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

SMD Type
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-Emitter Turn-On Voltage *
Static Forward Current Transfer Ratio *
Transitional frequency
Input capacitance
Output capacitance
Turn-on time
Turn-off time
* Pulse test: tp = 300 ìs; d
0.02.
Marking
Marking
FZT690B
Symbol
Testconditons
V(BR)CBO IC=100ìA
V(BR)CEO IC=10mA
V(BR)EBO IE=100ìA
ICBO VCB=35V
IEBO VEB=4V
VCE(sat) ^{IC=0.1A, IB=0.5mA}
IC=1A, IB=5mA
VBE(sat) IC=1A, IB=10mA
VBE(on) IC=1A, VCE=2V
IC=100mA, VCE=2V
hFE
IC=1A, VCE=2V
IC=2A, VCE=2V
IC=3A, VCE=2V
fT IC=50mA, VCE=5V f=50MHz
Cibo VEB=0.5V, f=1MHz
Cobo VCB=10V, f=1MHz
t(on) IC=500mA, VCC=10V
t(off) IB1=50mA,IB2=50mA
Transistors
Product specification
FZT690B
Min Typ Max Unit
45
V
45
V
5
V
0.1 ìA
0.1 ìA
0.1
0.5
V
0.9 V
0.9 V
500
400
100
50
150
MHz
200
pF
16
pF
33
ns
1300
ns
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