FTD2019 Datasheet, PDF (2/2 Pages) Sanyo Semicon Device – Load Switching Applications

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■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Cutoff Voltage
Drain- Source on-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
Diode Forward Voltage
■ Marking
Marking
2019
Symbol
Test conditions
VDSS VGS=0V,ID=1mA
IDSS VDS=30V,VGS=0V
IGSS VGS=±8V,VDS=0V
VGS(off) VDS=10V, ID=1mA
VGS=4V,ID=5A
RDS(ON)
VGS=2.5V,ID=2A
Ciss
Coss VDS = 10V, VGS = 0V,f =1.0MHZ
Crss
tD(on)
tr _{VDD=15V,ID=5A,VGS=4V,}
tD(off) ^{RL=3Ω,RGEN=50Ω}
tf
Qg
Qgs VDS = 10V, ID = 5A,VGS = 10V
Qgd
VSD IS=5A, VGS=0
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Product specification
FTD2019
Min Typ Max Unit
30
V
1 μA
±10 μA
0.4
1.3 V
28 mΩ
35 mΩ
1300
pF
280
pF
160
pF
18
ns
115
ns
130
ns
145
ns
50
nC
2.5
nC
5
nC
1.2 V
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