FMMTL717 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

SMD Type
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base cut-off current
Emitter-base current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter ON voltage
DC current gain
Current-gain-bandwidth product
Output capacitance
Turn-on time
Turn-off time
* Pulse test: tp 300 ìs; d 0.02.
TransistIoCrs
Product specification
FMMTL717
Symbol
Testconditons
V(BR)CBO _IC=-100ìA
V(BR)CEO _IC=-10mA*
V(BR)EBO _IE=-100ìA
ICBO _VCB=-10V
IEBO _VEB=-4V
IC=-100mA, IB=-10mA*
VCE(sat) ^{IC=-500mA, IB=-20mA*}
IC=-1A, IB=-50mA*
IC=-1.25A,IB=-50mA
VBE(sat) _{IC=-1.25A, IB=-50mA*}
VBE(on) _{IC=-1.25A, VCE=-2V*}
hFE
fT
Cobo
t(on)
t(off)
IC=-10mA, VCE=-2V
IC=-100mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
IC=-3A, VCE=-2V*
IC=-50mA, VCE=-10V f=100MHz
VCB=-10V, f=1MHz
IC=-1A, VCC=-10V
IB1=IB2=-10mA
Min Typ Max Unit
-12 -35
V
-12 -25
V
-5 -8.5
V
-10 nA
-10 nA
-24 -40
-94 -140
-160 -240
mV
-200 -290
-970 -1100 mV
-875 _{-1000 mV}
300 490
300 450
180 275
100 180
50 110
205
MHz
15 20 pF
76
ns
149
ns
Marking
Marking
L77
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