FMMTL619 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

SMD Type
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-base cut-off current
Emitter-base current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter ON voltage
DC current gain
Current-gain-bandwidth product
Output capacitance
Turn-on time
Turn-off time
* Pulse test: tp 300 ìs; d 0.02.
Marking
Marking
L69
Symbol
V(BR)CBO _IC=100ìA
V(BR)CEO _IC=5mA*
V(BR)EBO _IE=100ìA
ICBO _VCB=40V
IEBO _VEB=4V
Testconditons
IC=100mA, IB=10mA*
VCE(sat) ^{IC=250mA, IB=10mA*}
IC=500mA, IB=25mA*
IC=1.25A, IB=125mA*
VBE(sat) _{IC=1.25A, IB=125mA*}
VBE(on) _{IC=1.25A, VCE=2V*}
hFE
fT
Cobo
t(on)
t(off)
IC=10mA, VCE=5V
IC=200mA, VCE=5V*
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
IC=2A, VCE=5V*
IC=50mA, VCE=10V f=100MHz
VCB=10V, f=1MHz
IC=1A, VCC=10V
IB1=-IB2=10mA
TransistIoCrs
Product specification
FMMTL619
Min Typ Max Unit
100 210
V
50 70
V
5 8.5
V
10 nA
10 nA
24 45
60 100
100 180
mV
195 330
1020 1100 mV
895 _{1000 mV}
200 400
300 450
200 400
100 230
30 50
180
MHz
6
8 pF
182
ns
379
ns
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