FMMT717 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – SILICON POWER (SWITCHING) TRANSISTORS

SSMMDD TTyyppee
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
DC current gain *
Current-gain-bandwidth product
Output capacitance
Turn-on time
Turn-off time
* Pulse test: tp 300 ìs; d 0.02.
Marking
Marking
717
Symbol
Testconditons
V(BR)CBO _IC=-100ìA
V(BR)CEO _IC=-10mA
V(BR)EBO _IE=-100ìA
ICBO _VCB=-10V
IEBO _VEB=-4V
IC=-0.1A, IB=-10mA
VCE(sat) ^{IC=-1A, IB=-10mA}
IC=-1.5A, IB=-50mA
IC=-2.5A, IB=-50mA
VBE(sat) _{IC=-2.5A,IB=-50mA}
VBE(ON) _{IC=-2.5A,VCE=-2V}
hFE
fT
Cobo
t(on)
t(off)
IC=-10mA, VCE=-2V
IC=-100mA, VCE=-2V
IC=-2.5A, VCE=-2V
IC=-8A, VCE=-2V
IC=-10A, VCE=-2V
IC=-50mA,VCE=-10V,f=100MHz
VCB=-10V,f=1MHz
VCC=-6V, IC=-2A
IB1=-IB2=50mA
TrraannssiissttIooCrrs
Product specification
FMMT717
Min Typ Max Unit
-12 -35
V
-12 -25
V
-5 -8.5
V
-100 nA
-100 nA
-10 -17
-100 -140
-110 -170
mV
-180 -220
-0.9 -1
V
-0.8 -1 V
300 ₄₇₅
300 ₄₅₀
180 ₂₇₅
60 ₁₀₀
45 ₇₀
80 110
MHz
21 30 pF
70
ns
130
ns
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