FMMT625 Datasheet, PDF (2/2 Pages) Diodes Incorporated – 150V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

SMD Type
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector emitter cutoff current
Collector-emitter saturation voltage *
Base-Emitter Saturation Voltage *
Base-Emitter Turn-On Voltage *
DC current gain
Output capacitance
Transition frequecy
Symbol
Test conditons
V(BR)CBO IC=100μA
V(BR)CEO IC=10mA
V(BR)EBO IE=100μA
ICBO VCB=130V
IEBO VEB=4V
ICES VCES=130V
IC=0.1A,IB=10mA
VCE(sat) IC=0.1A,IB=1mA
IC=1A,IB=50mA
VBE(sat) IC=1A, IB=50mA*
VBE(on) IC=1A, VCE=10V*
IC=10mA, VCE=10V*
IC=200mA,VCE=10V
hFE
IC=1A, VCE=10V*
IC=3A, VCE=10V*
Cob VCB=10V,f=1MHz
fT IC=50mA,VCE=10V,f=100MHz
* Pulse test: tp ≤ 300 μs; d ≤ 0.02.
■ Marking
Marking
625
ransistors
Product specification
FMMT625
Min Typ Max Unit
150
V
150
V
5
V
100 nA
100 nA
100 nA
26 50 mV
110 200 mV
180 300 mV
0.85 1.0 V
0.74 1.0 V
200 400
300 450
30 45
15
6 10 pF
100 135
MHz
http://www.twtysemi.com
[e-mail]
4008-318-123
2 of 2