FMMT624 Datasheet, PDF (2/2 Pages) Diodes Incorporated – 150V NPN SILICON LOW SATURATION TRANSISTOR IN SOT-23

SMD Type
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector emitter cutoff current
Collector-emitter saturation voltage *
Base-Emitter Saturation Voltage *
Base-Emitter Turn-On Voltage *
DC current gain
Output capacitance
Transition frequecy
* Pulse test: tp ≤ 300 μs; d ≤ 0.02.
Symbol
Test conditons
V(BR)CBO IC=100μA
V(BR)CEO IC=10mA
V(BR)EBO IE=100μA
ICBO VCB=100V
IEBO VEB=4V
ICES VCES=100V
IC=0.1A,IB=10mA
IC=0.5A,IB=50mA
VCE(sat)
IC=0.5A,IB=10mA
IC=1A,IB=50mA
VBE(sat) IC=1A, IB=50mA*
VBE(on) IC=1A, VCE=10V*
IC=10mA, VCE=10V*
IC=200mA,VCE=10V
hFE
IC=1A, VCE=10V*
IC=3A, VCE=10V*
Cob VCB=10V,f=1MHz
fT IC=50mA,VCE=10V,f=100MHz
■ Marking
Marking
624
ransistors
Product specification
FMMT624
Min Typ Max Unit
125
V
125
V
5
V
100 nA
100 nA
100 nA
26 50
70 150
mV
160 220
165 250
0.85 1.0 V
0.7 1.0 V
200 400
300 450
100 140
18
7 15 pF
100 155
MHz
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