FMMT617TA Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Silicon Power Transistor

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■ Electrical Characteristics Ta = 25℃
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
Symbol
Test conditions
V(BR)CBO IC=100μA
V(BR)CEO IC=10mA*
V(BR)EBO IE=100μA
ICBO VCB=10V
IEBO VEB=4V
ICES VCES=10V
IC=0.1A, IB=10mA*
VCE(sat) IC=1A, IB=10mA*
IC=3A, IB=50mA*
VBE(sat) IC=3A, IB=50mA*
VBE(om) IC=3A, VCE=2V*
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
hFE IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=12A, VCE =2V*
fT
IC=50mA, VCE=10V,f=50MHz
Cobo VCB=10V, f=1MHz
t(on) VCC=10V, IC=3A
t(off) IB1=IB2=50mA
*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤ 2%
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Product specification
FMMT617TA
Min Typ Max Unit
15
V
15
V
5
V
100 nA
100 nA
100 nA
8 14 mV
70 100 mV
150 200 mV
0.9 1.0 V
0.84 1.0 V
200 415
300 450
200 320
150 240
80
80 120
MHZ
30 40 pF
120
ns
160
ns
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