FMMT596 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Collector-Emitter Cut-Off Current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Static Forward Current Transfer Ratio
Current-gain-bandwidth product
Output capacitance
* Pulse test: tp = 300 ìs; d 0.02.
Marking
Marking
596
Symbol
Testconditons
V(BR)CBO _IC=-100ìA
V(BR)CEO _IC=-10mA
V(BR)EBO _IE=-100ìA
ICBO _VCB=-200V
ICES _VCE=-200V
IEBO _VEB=-4V
VCE(sat) ^{IC=-100mA, IB=-10mA}
IC=-250mA, IB=-25mA
VBE(sat) _{IC=-250mA, IB=-25mA}
VBE(ON) _{IC=-250mA,VCE=-10V}
IC=-1mA, VCE=-10V
hFE ^{IC=-100mA,VCE=-10V*}
IC=-250mA,VCE=-10V*
fT
Cobo
IC=-400mA,VCE=-10V*
IC=-50mA,VCE=-10V,f=100MHz
VCB=-10V,f=1MHz
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Product specification
FMMT596
Min Typ Max Unit
-220
V
-200
V
-5
V
-100 nA
-100 nA
-100 nA
-0.2 V
-0.35 V
-1.0 V
-0.9 V
100
100
85
300
35
150
MHz
10 pF
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