FMMT493 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector cutoff current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Static Forward Current Transfer Ratio
Transition Frequency
Collector-Base Breakdown Voltage
* Pulse test: tp 300 ìs; d 0.02.
Marking
Marking
493
Symbol
Testconditons
V(BR)CBO _IC=100ìA
V(BR)CEO _IC=10mA
V(BR)EBO _IE=100ìA
ICBO _VCB=100V
IEBO _VEB=4V
ICES _VCB=100V
VCE(sat) ^{IC=500mA,IB=50mA}
IC=1A,IB=100mA
VBE(sat) _{IC=1A,IB=100mA}
VBE(ON) _{IC=1A,VCE=10V}
IC=1mA, VCE=10V*
hFE ^{IC=250mA, VCE=10V*}
IC=500mA, VCE=10V*
fT
Cobo
IC=1A, VCE=10V*
IC=50mA,VCE=10V,f=100MHz
VCB=10V,f=1MHz
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Product specification
FMMT493
Min Typ Max Unit
120
V
100
V
5
V
100 nA
100 nA
100 nA
0.3
0.6
V
1.15 V
1.0 V
100
100
300
60
20
150
MHz
10 pF
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