FMMT4124 Datasheet, PDF (2/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ）

SMD Type
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
DC current gain *
Current-gain-bandwidth product
Output capacitance
Input capacitance
Noise figure
Small signal current transfer
Delay time
Rise time
Storage time
Fall time
* Pulse test: tp 300 ìs; d 0.02.
Marking
Marking
ZC
TransistIoCrs
Product specification
FMMT4124
Symbol
Testconditons
V(BR)CBO _IC=10µA
V(BR)CEO _IC=1mA
V(BR)EBO _IE=10µA
ICBO _VCE=20V
IEBO _VEB=3V
VCE(sat) _{IC=50mA, IB=5mA}
VBE(sat) _{IC=50mA, IB=5mA}
hFE _{IC=2mA, VCE=1V}
fT IC=10mA, VCE=20V f=100MHz
Cobo
Cibo
NF
hfe
VCB=5V, IE=0, f=140KHz
VBE=0.5V, IC=0, f=140KHz
VCE=5V IC=200µA,Rg=2K?
f=30Hz to 15KHz at -3dB points
IC=2mA, VCE=1V, f=1KHz
td
VCC=3V, IC=10mA,IB1=1mA
tr
VBE(off)=0.5V
ts _{VCC=3V, IC=10mA}
tf
IB1= IB2=1mA
Min Typ Max Unit
30
V
25
V
5
V
50 nA
50 nA
0.3 V
0.95 V
120
360
300
MHz
4 pF
8 pF
6 dB
120 480
24 ns
13 ns
125 ns
11 ns
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