FML9 Datasheet, PDF (2/4 Pages) Rohm – General purpose transistor (isolated transistor and diode)

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■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Transistor TR1
Collector-Base Breakdown Voltage
V(BR)CBO IC = -10 μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO IC = -1 mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO IC = -10 μA, IC = 0
Collector cutoff current
ICBO VCB=-15V, IE=0
Emitter cutoff current
IEBO VEB=-6V, IC=0
DC current gain
hFE VCE=-2V, IC= -200mA
collector-emitter saturation voltage *
Transition frequency
Collector output capacitance
Di2
VCE(sat)
fT
Cob
IC = -500 mA; IB = -25 mA
IC = -200 mA; VCE = -2 V; f = 100 MHz
VCB=-10V, IE=0A, f=1MHz
Forward voltage
Reverse current
VF _IF=700mA
IR
VR=20V
* pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
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Product specification
FML9
Min Typ Max Unit
-15
V
-12
V
-6
V
-100 nA
-100 nA
270
680
-0.2 V
400
MHz
12
pF
490 mV
200 μA
■ Marking
Marking
L9
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