FDN352AP Datasheet, PDF (2/2 Pages) Fairchild Semiconductor – Single P-Channel, PowerTrench

SMD Type
Product specification
FDN352AP
Electrical Characteristics T_A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BV_DSS Drain–Source Breakdown Voltage
∆BVDSS
∆T_J
Breakdown Voltage Temperature Coefficient
I_DSS
Zero Gate Voltage Drain Current
I_GSS
Gate–Body Leakage
On Characteristics
V_GS = 0 V, I_D = –250 µA
I_D = –250 µA, Referenced to 25°C
V_DS = –24 V, V_GS = 0 V
V_GS = ±25V, V_DS = 0 V
V_GS(th)
∆VGS(th)
∆T_J
R_DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
g_FS
Forward Transconductance
Dynamic Characteristics
V_DS = V_GS, I_D = –250 µA
I_D = –250 µA, Referenced to 25°C
V_GS = –10 V, I_D = –1.3 A
V_GS = –4.5 V, I_D = –1.1 A
V_GS = –4.5 V, I_D = –1.1 A, T_J = 125°C
V_DS = –5 V, I_D = –0.9 A
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Switching Characteristics
V_DS = –15 V, V_GS = 0 V, f = 1.0 MHz
t_d(on)
t_r
Turn–On Delay Time
Turn–On Rise Time
V_DD = –10 V, I_D = –1 A,
V_GS = –10 V, R_GEN = 6 Ω
t_d(off)
Turn–Off Delay Time
t_f
Turn–Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate–Source Charge
V_DS = –10V, I_D = –0.9 A,
V_GS = –4.5 V
Q_gd
Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain–Source Diode Forward Current
V_SD
Drain–Source Diode Forward Voltage
V_GS = 0 V, I_S = –0.42 A
t_rr
Diode Reverse Recovery Time
Q_rr
Diode Reverse Recovery Charge
I_F = –3.9 A,
dI_F/dt = 100 A/µs
–30
–0.8
Typ
–17
–2.0
4
150
250
330
2.0
150
40
20
4
15
10
1
1.4
0.5
0.5
–0.8
17
7
Max Units
V
mV/°C
–1
µA
±100 nA
–2.5
V
mV/°C
180 mΩ
300
400
S
pF
pF
pF
8
ns
28
ns
18
ns
2
ns
1.9 nC
nC
nC
–0.42 A
–1.2
V
ns
nC
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