ESDBL5V0F2 Datasheet, PDF (2/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Bi-direction ESD Protection Diode

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Parameter
Electrostatic Discharge Voltage( IEC61000−4−2) (Note 1)
Air Model
Contact Model
Per Human Body Model
Machine Model
Peak Pulse Power (8/20µs Waveform) (Note 2)
Peak Pulse Current (8/20µs Waveform) (Note 2)
Product specification
Symbol
V_ESD
P_PP
I_PP
Limit
±30
±30
16
400
62.5
5
Unit
kV
V
W
A
Lead Solder Temperature − Maximum (10 Second Duration)
T_L
260
℃
Junction Temperature
T_j
150
℃
Storage Temperature Range
T_stg
-55 ~ +150
℃
Note:
(1).Device stressed with ten non-repetitive ESD pulses.
(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5.
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above
the recommended. Operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions
may affect device reliability.
ELECTRICAL PARAMETER
Symbol
Parameter
I_PP
Maximum Reverse Peak Pulse Current
V_C
Clamping Voltage @ I_PP
V_RWM
Working Peak Reverse Voltage
I_R
Maximum Reverse Leakage Current @ V_RWM
V_BR
Breakdown Voltage @ I_T
I_T
Test Current
Fig 1. V-I characteristics for a bi-directional TVS
ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)
Parameter
Reverse stand off voltage
Breakdown voltage
Reverse current
Clamping voltage
Total capacitance
Symbol
V_RWM^{（1）}
V_(BR)
I_R
V_C^{（2）}
C_tot
Test conditions
I_T=1mA
V_RWM=5V
I_PP=5A
V_R=0V,f=1MHz
Min Typ Max
Unit
5
V
5.8
8
V
0.1
μA
12.5
V
10
pF
(1).Other voltages available upon request.
(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5.
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