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| ESDBKU3V0D3 Datasheet, PDF (2/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Bi-direction ESD Protection Diode | |||
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ELECTRICAL PARAMETER
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted )
Device(1)
Device
Marking
VRWM (V)
Max
IR (μA)
@ VRWM
Max
VBR (V) (2)
@ IT=1mA
VC1(V)
@IPP(3)=1 A
Min Max
Max
VC2(V)
@IPP(3)=5 A
Max
VCMAX(V)
@IPP(max)(3)=19 A
Max
ESDBKU3V0D3
AC
3
20
4
6
7
10
15.8
(1)Other voltages available upon request.
(2)VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
(3) Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC 61000-4-5.
C (pF)
@VR=0,f=1MHz
Typ Max
1.5
2
A-2,Jul,2013
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