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| CES2316 Datasheet, PDF (2/2 Pages) Chino-Excel Technology – N-Channel Enhancement Mode Field Effect Transistor | |||
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Product specification
CES2316
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
VGS = 0V, ID = 250µA
30
IDSS
VDS = 30V, VGS = 0V
IGSSF
VGS = 20V, VDS = 0V
IGSSR
VGS = 20V, VDS = 0V
V
1
µA
100 nA
-100 nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
VGS = VDS, ID = 250µA 1.0
3.0
V
VGS = 10V, ID = 6A
27
34 mâ¦
VGS = 4.5V, ID = 4.9A
36
50 mâ¦
VDS = 15V, ID = 6A
8
S
610
pF
VDS = 15V, VGS = 0V,
f = 1.0 MHz
145
pF
95
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 5.5A,
VGS = 10V, RGEN = 3â¦
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 6A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = 1.7A
9
20
ns
3
8
ns
24
50
ns
4
10
ns
12.3 16 nC
1.5
nC
2.5
nC
1.7
A
1.2
V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
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